Study of effect of temperature and doping of mobility of charge carriers on semiconductors

Abstract

In this study that have two type of charge carriers in semiconductors, contribute to the electron a current, and since the the hole, current can in a semiconductor was determined largely by the number of electrons in the conduction band and the number of holes in the valence band. The mobility of charge carriers which relates the average drift velocity to the electric field. We can make a carrier go as fast as we like just by increasing the electric field. Also was studied the variation of mobility with temperature. At high temperature the mobility decreases, by the lattice atoms, at low temperature the mobility decreases also by ionized impurity. The carrier have a similar doping dependence: for low doping concentration, the mobility is almost constant. At higher doping concentration, the mobility decreases due to ionized impurity.