Conductivity Simulation of Gallium Arsenic (GaAs) Materials

Please use this identifier to cite or link to this item: https://repository.sustech.edu/handle/123456789/1631

Title:	Conductivity Simulation of Gallium Arsenic (GaAs) Materials
Other Titles:	محاكاة التوصيلية لمادة جاليوم أرسنيد
Authors:	Ibrahim, Adam Sulieman
Keywords:	Gallium - simulation
Issue Date:	1-Jul-2012
Publisher:	Sudan University of Science and Technology
Citation:	Ibrahim,Adam Sulieman.Conductivity Simulation of Gallium Arsenic (GaAs) Materials/Adam Sulieman Ibrahim;Mohamed Hassan Eisa.-Khartoum:Sudan University of Science and Technology,College of Science,2012.-35p. : ill. ; 28cm.-M.Sc.
Abstract:	The conductivity of GaAs semiconductor have examined and simulated by MATLAB code. The computer simulations are used to produces accurate physical characteristics of gallium arsenide from thermal information. The variation of conductivity at various temperatures and the effect of the doping concentration have studied. It is found that the conductivity jumped at above the absolute zero temperature, and largely proportional to various temperature. Also we have investigated that the energy gap it is proportional inversely with temperature. The relation of these results to experimental data in the literature was discussed
Description:	Thesis
URI:	http://hdl.handle.net/123456789/1631
Appears in Collections:	Masters Dissertations : Science

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