Please use this identifier to cite or link to this item: https://repository.sustech.edu/handle/123456789/1631
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dc.contributor.authorIbrahim, Adam Sulieman-
dc.date.accessioned2013-09-19T09:49:35Z-
dc.date.available2013-09-19T09:49:35Z-
dc.date.issued2012-07-01-
dc.identifier.citationIbrahim,Adam Sulieman.Conductivity Simulation of Gallium Arsenic (GaAs) Materials/Adam Sulieman Ibrahim;Mohamed Hassan Eisa.-Khartoum:Sudan University of Science and Technology,College of Science,2012.-35p. : ill. ; 28cm.-M.Sc.en_US
dc.identifier.urihttp://hdl.handle.net/123456789/1631-
dc.descriptionThesisen_US
dc.description.abstractThe conductivity of GaAs semiconductor have examined and simulated by MATLAB code. The computer simulations are used to produces accurate physical characteristics of gallium arsenide from thermal information. The variation of conductivity at various temperatures and the effect of the doping concentration have studied. It is found that the conductivity jumped at above the absolute zero temperature, and largely proportional to various temperature. Also we have investigated that the energy gap it is proportional inversely with temperature. The relation of these results to experimental data in the literature was discusseden_US
dc.description.sponsorshipSudan University of Science and Technologyen_US
dc.language.isoenen_US
dc.publisherSudan University of Science and Technologyen_US
dc.subjectGallium - simulationen_US
dc.titleConductivity Simulation of Gallium Arsenic (GaAs) Materialsen_US
dc.title.alternativeمحاكاة التوصيلية لمادة جاليوم أرسنيدen_US
dc.typeThesisen_US
Appears in Collections:Masters Dissertations : Science

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