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Annealing of some diodes and trimming of carbon resistors using CW Nd

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dc.contributor.author Ibrahim, Saad El-Din El-Sadig Mohammed
dc.contributor.author Supervisor, - Nafie Abdel Latif Supervisor, -co-Abdalla Salih Ali
dc.date.accessioned 2013-11-27T08:12:55Z
dc.date.available 2013-11-27T08:12:55Z
dc.date.issued 2007-09-01
dc.identifier.citation Ibrahim , Saad El-Din El-Sadig Mohammed . Annealing of some diodes and trimming of carbon resistors using CW Nd : YAG laser / Saad El-Din El-Sadig Mohammed Ibrahim ; Nafie Abdel Latif , Abdalla Salih Ali .- Khartoum : sudan university of scince and technology , Institute Of Laser , 2007 .- 67P. : ill. ; 28cm .- M.Sc. en_US
dc.identifier.uri http://repository.sustech.edu/handle/123456789/2505
dc.description Thesis en_US
dc.description.abstract In this work, the I-V characteristics of the silicon diode were investigated by applying 5W from CW Nd: YAG laser for 10, 20, and 30 seconds, respectively. The results showed that different exposure times changed the biasing voltage of the diode from 0.7V to 0.65V only. In case of silicon transistor and operational amplifier, the results also showed that the output signal did not changed or distorted, although they were exposed to high power from CW Nd:YAG laser reached to 70W. Trimming of fixed carbon resistors using the same Nd:YAG laser with powers of 20,25, and 30W and exposure times of 1,2,,3,5, and 10 seconds for several times, gave different resistance values . The results illustrated that low power and long exposure time (longer than 10 seconds) changed the resistor value gradually so it can be controlled to reach the value that is suitable for specific application. en_US
dc.description.sponsorship Sudan University Of Science and Technology en_US
dc.language.iso en en_US
dc.publisher sudan university of scince and technology en_US
dc.subject Silicon Transistor en_US
dc.subject Lasers Types en_US
dc.title Annealing of some diodes and trimming of carbon resistors using CW Nd en_US
dc.type Thesis en_US


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