Abstract:
In this work, the I-V characteristics of the silicon diode were
investigated by applying 5W from CW Nd: YAG laser for 10, 20, and
30 seconds, respectively. The results showed that different exposure
times changed the biasing voltage of the diode from 0.7V to 0.65V only.
In case of silicon transistor and operational amplifier, the results also
showed that the output signal did not changed or distorted, although
they were exposed to high power from CW Nd:YAG laser reached to
70W.
Trimming of fixed carbon resistors using the same Nd:YAG laser with
powers of 20,25, and 30W and exposure times of 1,2,,3,5, and 10
seconds for several times, gave different resistance values .
The results illustrated that low power and long exposure time (longer
than 10 seconds) changed the resistor value gradually so it can be
controlled to reach the value that is suitable for specific application.
