Studying the I-V characteristics of Tunneling Resonant Diode

Hassan, Malaz Mohamed Osman; Supervisor, -Isam Ahmed Attia

dc.contributor.author	Hassan, Malaz Mohamed Osman
dc.contributor.author	Supervisor, -Isam Ahmed Attia
dc.date.accessioned	2021-12-28T09:48:00Z
dc.date.available	2021-12-28T09:48:00Z
dc.date.issued	2021-07-07
dc.identifier.citation	Hassan, Malaz Mohamed Osman .Studying the I-V characteristics of Tunneling Resonant Diode \ Malaz Mohamed Osman Hassan ; Isam Ahmed Attia .- Khartoum:Sudan University of Science & Technology,College of Science,2021.-40p.:ill.;28cm.-M.Sc.	en_US
dc.identifier.uri	http://repository.sustech.edu/handle/123456789/26903
dc.description	Thesis	en_US
dc.description.abstract	A common problem in the tunneling diodes circuits is the I-V characteristic equation, the research concerns on a numerical simulation. This study describes the I-V characteristic equation Based on practical Resonant Tunneling Diode, it has adopted the I-V characteristic equation and transition to analyze the I-V equation using MATLAB. Special when these devices are biased in their negative differential resistance (NDR) region. The measured current-voltage (I-V) characteristics in the NDR region and current with voltage and a plateau like waveform in this region. Experimental equation validates to the Esaki model, and this is confirmed by the measured I-V characteristics.	en_US
dc.description.sponsorship	Sudan University of Science & Technology	en_US
dc.language.iso	en	en_US
dc.publisher	Sudan University of Science and Technology	en_US
dc.subject	Science	en_US
dc.subject	Physics	en_US
dc.subject	I-V characteristics	en_US
dc.subject	Tunneling Resonant Diode	en_US
dc.title	Studying the I-V characteristics of Tunneling Resonant Diode	en_US
dc.title.alternative	دراسة خصائص الجهد والتيار لثنائي الرنين النفقي	en_US
dc.type	Thesis	en_US