Abstract:
The conductivity of GaAs semiconductor have examined and simulated by MATLAB code. The computer simulations are used to produces accurate physical characteristics of gallium arsenide from thermal information. The variation of conductivity at various temperatures and the effect of
the doping concentration have studied. It is found that the conductivity jumped at above the absolute zero
temperature, and largely proportional to various
temperature. Also we have investigated that the energy gap it is proportional inversely with temperature. The relation of these results to experimental data in the literature was discussed
