Abstract:
Using the powder of Aluminum hydroxide AL(OH)3 and the solution of iodine and two type of Gum Arabic(Talha and Hashab ) which are different concentration and doping rate , they are treated physically by heating first and then pressing to transform to tablet shape as making semiconductor p-type .
In the first type of Gum Arabic we obtained energy gap (3eV) as maximum when the doping rate was 0.8 % and the concentration was 0.8 mg / L.
While we using Hashab were obtained maximum energy gap (2.199700 eV) when the doping rate was 0.2 % and the concentration was 0.2 mg / L.
This new materials for doping semiconductor Gum Arabic, shows many interesting properties. Talha Gum get regular increasing of Eg related to increase in concentration and doping rate. While the Hashab get the random increasing of Eg related to decrease in concentration and doping rate ; It was observed that the different concentration of the samples confirmed the reason for the band gap shifts also in addition to active Aluminum properties that increased energy gap.
