The effect of magnetic flux on the efficiency of the silicon cell using experimental and quantum mechanical approaches

Abstract

In this work a useful expression for current generated by light in semiconductors is obtained by utilizing quantum theory. It is found that this expression shows dependence of this current on electric susceptibility, Einstein absorption coefficient as well as energy gap. This expression coincides with the classical one in the special case.

Experimental results show that the magnetic field and radiation affect the susceptibility and energy gap, the effect on susceptibility is determined via open voltage characteristics and refractive index change, while the effect on energy gap is found from experimental data by using some special theoretical and graphical relations with aid of least square method.

The effect of magnetic field on electric susceptibility is observed in interference experiments and results are in conformity with theoretical predications. The low magnetic field is observed to increase the energy gap, this is also explained theoretically.