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Please use this identifier to cite or link to this item: https://repository.sustech.edu/handle/123456789/21021
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dc.contributor.authorAbdelrahman, Nada Hamad Adam-
dc.contributor.authorSupervisor, -RawiaAbdelganiElobaid Mohammed-
dc.date.accessioned2018-07-02T09:12:55Z-
dc.date.available2018-07-02T09:12:55Z-
dc.date.issued2017-05-11-
dc.identifier.citationAbdelrahman, Nada Hamad Adam . Charge Carriers (Electrons and Holes) in Semiconductors \ Nada Hamad AdamAbdelrahman ; RawiaAbdelganiElobaid Mohammed .- Khartoum: Sudan University of Science and Technology, college of Science, 2017 .- 117p. :ill. ;28cm .- M.Sc.en_US
dc.identifier.urihttp://repository.sustech.edu/handle/123456789/21021-
dc.descriptionThesisen_US
dc.description.abstractHad been calculate the charge carriers concentration(ni) and energy gap (Eg), by indication of change temperature(T) ,know resistance(R0),unknow resistance(Rt)and lengths(L1,L2),where it was found that whenever increase temperature decreased concentration and energy gap.en_US
dc.description.sponsorshipSudan University of Science and Technologyen_US
dc.language.isoenen_US
dc.publisherSudan University of Science & Technologyen_US
dc.subjectscienceen_US
dc.subjectPhysicsen_US
dc.subjectCharge Carriersen_US
dc.subjectElectrons and Holesen_US
dc.titleCharge Carriers (Electrons and Holes) in Semiconductorsen_US
dc.typeThesisen_US
Appears in Collections:Masters Dissertations : Science

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