dc.contributor.author |
Khatier, Mona Mohamed Gumma |
|
dc.date.accessioned |
2014-02-25T10:09:25Z |
|
dc.date.available |
2014-02-25T10:09:25Z |
|
dc.date.issued |
2005-01-01 |
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dc.identifier.citation |
Khatier ,Mona Mohamed Gumma.The Electro-physical Properties and characterization Of FeS2 Thin films for PV \Mona Mohamed Gumma Khatier;Hassan M. O. Wardi .-Khartoum:Sudan University of Science and Technology,College of Science, 2005.-145p. : ill. ; 28cm.-PhD. |
en_US |
dc.identifier.uri |
http://hdl.handle.net/123456789/3662 |
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dc.description |
Thesis |
en_US |
dc.description.abstract |
Dialkyl-dithiocarbmato iron (111) complexes have been used for the deposition of iron sulfide thin films using chemical vapor deposition techniques. The single-source precursors used in this work have been prepared by reaction of FeCl3 with dialkyldithiocarbamate sodium salt and characterized by a number of analytical techniques, Good quality thin films of FeS2 have been prepared from the single source metal precursors, [Fe(S2CNMéHex)3,Fe(S2CNMéBu2)3,Fe(S2CNMéPr}3, Fe(S2CNMéBenz)3, Fe(S2CNMéEt2) 3], by AACVD.
XRD patterns of the films indicated crystalline iron sulfide ( FeS2) grown at beyween 350c and 500c, SEM images of the { FeS2 }films show them to have reasonable morphology and to be crystalline.
FeS2 thin films were prepared by thermal sulfidation of iron layers evaporated on glass substrates. Experiments were carried out to optimize the sulfidation parameters. For this purpose, morphological, compositional, crystallographic, optical, and electrical properties of the produced films and their relation with the parameters involved in the sulfidation process (temperature, sulfur pressure) are presented. From X-ray spectra and energy dispersive analysis of X-ray it is concluded that FeS2 starts to be formed at sulfidation temperature about 300C, X-ray patterns show that crystallinity and grain size of the films varies with the sulfur pressure. On the other hand, both the film receptivity and the optical absorption coefficient change abruptly at temperatures higher than 350c. |
en_US |
dc.description.sponsorship |
Sudan University of Science and Technology |
en_US |
dc.language.iso |
en |
en_US |
dc.publisher |
Sudan University of Science and Technology |
en_US |
dc.subject |
Physics |
en_US |
dc.subject |
chemical vape |
en_US |
dc.title |
The Electro-physical Properties and characterization Of FeS2 Thin films for PV |
en_US |
dc.type |
Thesis |
en_US |