Effect of Temperature on Density of State Function and the Valence Band in Semiconductors

Farah, WaleedAbdarahman; Supervisor, -Ahmed Elhassan Elfaki

dc.contributor.author	Farah, WaleedAbdarahman
dc.contributor.author	Supervisor, -Ahmed Elhassan Elfaki
dc.date.accessioned	2018-08-30T07:20:52Z
dc.date.available	2018-08-30T07:20:52Z
dc.date.issued	2018-06-06
dc.identifier.citation	Farah, WaleedAbdarahman . Effect of Temperature on Density of State Function and the Valence Band in Semiconductors \ WaleedAbdarahman Farah ; Ahmed Elhassan Elfaki .- Khartoum:Sudan University of Science & Technology,College of Science,2018.-52p.:ill.;28cm.-M.Sc.	en_US
dc.identifier.uri	http://repository.sustech.edu/handle/123456789/21359
dc.description	Thesis	en_US
dc.description.abstract	In this thesis the characteristic of semiconductor made of silicon diode was investigated. The energy gab was calculated and density of state function was studied as function of temperature variation and it was found that it was proportional to T^(3/2) as prescribed in theoretical consideration. The relation of semiconductor resistivity with temperature variation also investigated which reveals exponential relations.	en_US
dc.description.sponsorship	Sudan University of Science & Technology	en_US
dc.language.iso	en	en_US
dc.publisher	Sudan University of Science and Technology	en_US
dc.subject	Science	en_US
dc.subject	Physics	en_US
dc.subject	Temperature on Density	en_US
dc.subject	Valence Band in Semiconductors	en_US
dc.title	Effect of Temperature on Density of State Function and the Valence Band in Semiconductors	en_US
dc.title.alternative	أثر الحرارة على كثافة دالة الحالة و نطاق التكافؤ في اشباه الموصلات	en_US
dc.type	Thesis	en_US