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Charge Carriers (Electrons and Holes) in Semiconductors

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dc.contributor.author Abdelrahman, Nada Hamad Adam
dc.contributor.author Supervisor, -RawiaAbdelganiElobaid Mohammed
dc.date.accessioned 2018-07-02T09:12:55Z
dc.date.available 2018-07-02T09:12:55Z
dc.date.issued 2017-05-11
dc.identifier.citation Abdelrahman, Nada Hamad Adam . Charge Carriers (Electrons and Holes) in Semiconductors \ Nada Hamad AdamAbdelrahman ; RawiaAbdelganiElobaid Mohammed .- Khartoum: Sudan University of Science and Technology, college of Science, 2017 .- 117p. :ill. ;28cm .- M.Sc. en_US
dc.identifier.uri http://repository.sustech.edu/handle/123456789/21021
dc.description Thesis en_US
dc.description.abstract Had been calculate the charge carriers concentration(ni) and energy gap (Eg), by indication of change temperature(T) ,know resistance(R0),unknow resistance(Rt)and lengths(L1,L2),where it was found that whenever increase temperature decreased concentration and energy gap. en_US
dc.description.sponsorship Sudan University of Science and Technology en_US
dc.language.iso en en_US
dc.publisher Sudan University of Science & Technology en_US
dc.subject science en_US
dc.subject Physics en_US
dc.subject Charge Carriers en_US
dc.subject Electrons and Holes en_US
dc.title Charge Carriers (Electrons and Holes) in Semiconductors en_US
dc.type Thesis en_US


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