Conductivity Simulation of Gallium Arsenic (GaAs) Materials

Ibrahim, Adam Sulieman

dc.contributor.author	Ibrahim, Adam Sulieman
dc.date.accessioned	2013-09-19T09:49:35Z
dc.date.available	2013-09-19T09:49:35Z
dc.date.issued	2012-07-01
dc.identifier.citation	Ibrahim,Adam Sulieman.Conductivity Simulation of Gallium Arsenic (GaAs) Materials/Adam Sulieman Ibrahim;Mohamed Hassan Eisa.-Khartoum:Sudan University of Science and Technology,College of Science,2012.-35p. : ill. ; 28cm.-M.Sc.	en_US
dc.identifier.uri	http://hdl.handle.net/123456789/1631
dc.description	Thesis	en_US
dc.description.abstract	The conductivity of GaAs semiconductor have examined and simulated by MATLAB code. The computer simulations are used to produces accurate physical characteristics of gallium arsenide from thermal information. The variation of conductivity at various temperatures and the effect of the doping concentration have studied. It is found that the conductivity jumped at above the absolute zero temperature, and largely proportional to various temperature. Also we have investigated that the energy gap it is proportional inversely with temperature. The relation of these results to experimental data in the literature was discussed	en_US
dc.description.sponsorship	Sudan University of Science and Technology	en_US
dc.language.iso	en	en_US
dc.publisher	Sudan University of Science and Technology	en_US
dc.subject	Gallium - simulation	en_US
dc.title	Conductivity Simulation of Gallium Arsenic (GaAs) Materials	en_US
dc.title.alternative	محاكاة التوصيلية لمادة جاليوم أرسنيد	en_US
dc.type	Thesis	en_US