Abstract:
In this study that have two type of charge carriers in
semiconductors,
contribute
to
the
electron
a current,
and
since
the
the
hole,
current
can
in
a
semiconductor was determined largely by the number
of electrons in the conduction band and the number of
holes in the valence band. The mobility of charge
carriers which relates the average drift velocity to the
electric field. We can make a carrier go as fast as we
like just by increasing the electric field. Also was
studied the variation of mobility with temperature. At
high temperature the mobility decreases, by the lattice
atoms, at low temperature the mobility decreases also
by ionized impurity. The carrier have a similar doping
dependence: for low doping concentration, the mobility
is almost constant. At higher doping concentration, the
mobility decreases due to ionized impurity.
