Abstract:
In this thesis, experimental measurements were carried out to determine the radiation induced effect on the electrical properties of silicon based diode type 1N4007. The gamma ray photons of Cs-137 source were used to irradiate the diode under test. The results in terms of IV characteristics were compared for post and pre irradiated diode. It is found that the forward current has increased with respect to operating voltage (0.7V) by about 42%.
Furthermore, the possibility of using cement powder to shield the diode under test was explored. The results for bar and shielded diode were compared pre and post irradiation. It is found that the presence of cement coating has effectively shifted the current values to near normal regions with respect to operating voltage for silicon diodes.
