Studying the I-V characteristics of Tunneling Resonant Diode

Abstract

A common problem in the tunneling diodes circuits is the I-V characteristic equation, the research concerns on a numerical simulation. This study describes the I-V characteristic equation Based on practical Resonant Tunneling Diode, it has adopted the I-V characteristic equation and transition to analyze the I-V equation using MATLAB. Special when these devices are biased in their negative differential resistance (NDR) region. The measured current-voltage (I-V) characteristics in the NDR region and current with voltage and a plateau like waveform in this region. Experimental equation validates to the Esaki model, and this is confirmed by the measured I-V characteristics.