Optical, Electrical, Magnetic, and Structural Properties of Talha and Hashab Gum Doped with Iodine

Abstract

The aim of this work is to use Gum in solar cells and electronic circuits by doping it with suitable compounds to act as a semiconductor. This will minimize the cost of electronic circuits and solar cells. Two cultivars of Gum (Talha and Hashab) were used in this study five samples from Talha Gum and other five samples from Hashab Gum were doped with iodine having concentrations (0.1, 0.2, 0.3, 0.4, 0.5 ppm) by thermo chemical method. The optical properties and band positions were studied using Ultraviolet –Visible (UV-VIS) spectroscopy and Fourier Transform Infrared (FTIR) Spectroscopy. The crystal parameters and the crystal nano sizes were studied using Scanning Electron Microscope (SEM) and X-Ray Diffraction (XRD). Upon increasing iodine concentration to be (0.1, 0.2, 0.3, 0.4and 0.5 ppm ) the Talha nano crystal sizes decrease taking values(98.60 , 85.52, 69.28, 60.59, and 53.46 nm) .The Hashab nano crystal sizes decrease also with corresponding values(96.63 , 82.98, 76.41, 67.11, and 52.57 nm). The increase of iodine concentrations increases absorption also for both Talha and Hashab .For Talha the increase of iodine concentration decreases the energy gap to take the values (2.364, 2.356, 2.352, 2.345, and 2.339 eV).For Hashab the energy gap increases assuming the values (2.453, 2.467, 2.473, 2.482, and 2.493 eV).The results of FTIR Spectrometer shows the existence of nine chemical bonds in Talha and six in Hashab. The bonds O-H , H-O-H ,C-O and C=C are common in Talha and Hashab. This explains that Talha Gum properties as semiconductor is better than Hashab Gum since its energy gap is narrower and can become narrower by doping.