Please use this identifier to cite or link to this item: https://repository.sustech.edu/handle/123456789/26749
Title: Determination of Optical and Structural Properties of Gum Arabic Doped by Aluminum Oxide to be used in Diode Multilayer
Other Titles: تحذيذ الخصائص الضوئية والتركيبية للصمغ العربي المشوب بأكسيذ الالموييو إستتخذاه ى الناائي هتعذد الطبقات
Authors: Hussain, Fatima Khalil Sharif
Supervisor, -Rawia AbdelganiElobaid Mohammed
Keywords: Physics
Science
Optical and Structural
Gum Arabic Doped
Issue Date: 18-Aug-2021
Publisher: Sudan University of Science & Technology
Citation: Hussain, Fatima Khalil Sharif . Determination of Optical and Structural Properties of Gum Arabic Doped by Aluminum Oxide to be used in Diode Multilayer \ Fatima Khalil Sharif Hussain ; Rawia AbdelganiElobaid Mohammed .- Khartoum:Sudan University of Science & Technology,College of Science,2021.-144p.:ill.;28cm.-Ph.D.
Abstract: This research discussed how use the local materials in the felid of manufacture semiconductors material by determining the optical and structural properties of Gum Arabic doped by aluminum oxide made by sol gel and chemo-thermal methods and to be used in diode multilayers. Four samples of Gum Arabic doping by aluminum oxide were prepared by sol gel method and other four samples which were prepared by using chemo -thermal method, after that the multi-layers were prepared by spin coating technique. The optical properties and structural parameter were found using UV-vis spectrometer and FTIR and XRD respectively. The XRD results showed the crystal structure for Gum Arabic Made by sol gel method was (Hexagonal- Primitive), while (Cubic – Primitive) for the chemothermal method .There were different optical properties result for the two method, for sol gel sample the maximal absorption at wavelength 465 nm corresponding to photon energy 2.667 eV, and for chemo-thermal sample the chemo-thermal maximal absorption at wavelengths 576 nm corresponding to photon energy 2.605 eV. An optical conductivity for sol gel sample equal to (9.63x108 Sec-1) at 435 nm and (9.61x108 Sec-1) at 510 nm, and for chemo-thermal were (9.58x108 Sec-1) at 442 nm and (9.55x108 Sec-1) at 520 nm , the change of optical conductivity at high photo -generation due to the high absorbance of all samples prepared according to electron excitation by photon energy. The I-V characteristic results of diode multilayer carried out it showed the relation between the number of layers and (Charge Injection Voltage and Turn on Voltage), voltage increases as the number of layers increases, while the density of current decreases in the two cases , so the I-V curve which was obtain is similar to the silicon I-V curve.
Description: Thesis
URI: http://repository.sustech.edu/handle/123456789/26749
Appears in Collections:PhD theses : Science

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