Annealing of some diodes and trimming of carbon resistors using CW Nd

Abstract

In this work, the I-V characteristics of the silicon diode were investigated by applying 5W from CW Nd: YAG laser for 10, 20, and 30 seconds, respectively. The results showed that different exposure times changed the biasing voltage of the diode from 0.7V to 0.65V only. In case of silicon transistor and operational amplifier, the results also showed that the output signal did not changed or distorted, although they were exposed to high power from CW Nd:YAG laser reached to 70W. Trimming of fixed carbon resistors using the same Nd:YAG laser with powers of 20,25, and 30W and exposure times of 1,2,,3,5, and 10 seconds for several times, gave different resistance values . The results illustrated that low power and long exposure time (longer than 10 seconds) changed the resistor value gradually so it can be controlled to reach the value that is suitable for specific application.