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Please use this identifier to cite or link to this item: https://repository.sustech.edu/handle/123456789/21359
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dc.contributor.authorFarah, WaleedAbdarahman-
dc.contributor.authorSupervisor, -Ahmed Elhassan Elfaki-
dc.date.accessioned2018-08-30T07:20:52Z-
dc.date.available2018-08-30T07:20:52Z-
dc.date.issued2018-06-06-
dc.identifier.citationFarah, WaleedAbdarahman . Effect of Temperature on Density of State Function and the Valence Band in Semiconductors \ WaleedAbdarahman Farah ; Ahmed Elhassan Elfaki .- Khartoum:Sudan University of Science & Technology,College of Science,2018.-52p.:ill.;28cm.-M.Sc.en_US
dc.identifier.urihttp://repository.sustech.edu/handle/123456789/21359-
dc.descriptionThesisen_US
dc.description.abstractIn this thesis the characteristic of semiconductor made of silicon diode was investigated. The energy gab was calculated and density of state function was studied as function of temperature variation and it was found that it was proportional to T^(3/2) as prescribed in theoretical consideration. The relation of semiconductor resistivity with temperature variation also investigated which reveals exponential relations.en_US
dc.description.sponsorshipSudan University of Science & Technologyen_US
dc.language.isoenen_US
dc.publisherSudan University of Science and Technologyen_US
dc.subjectScienceen_US
dc.subjectPhysicsen_US
dc.subjectTemperature on Densityen_US
dc.subjectValence Band in Semiconductorsen_US
dc.titleEffect of Temperature on Density of State Function and the Valence Band in Semiconductorsen_US
dc.title.alternativeأثر الحرارة على كثافة دالة الحالة و نطاق التكافؤ في اشباه الموصلاتen_US
dc.typeThesisen_US
Appears in Collections:Masters Dissertations : Science

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