Abstract:
In this work the effect of some high work functions of metals on semiconductors have been investigated by using metal-semiconductor contacts technology. To enhancements the efficiency of the semiconductor. In generally, the values of Schottky barrier height Φ_(B )and built in potential V_(bi ) were calculated which is depend on the work functions Φ_m and Φ_s.
The rhodium Rh is the best metal enable to contacts with germanium, silicon and gallium arsenide to increases the carrier concentration of the semiconductors was found. And also the good other metals like nickel, gold and platinum were found. But rhodium is the better.